GATE 2015 (Electronic Devices & Circuits) 1. Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFET? a. Sputtering b. Molecular Beam Epitaxy c. Wet Oxidation d. Dry Oxidation Solution : https://www.youtube.com/watch?v=aT-PUfpeyOY 2. In the circuit shown, the BJT has a current gain (β)...
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